Characterization of DLC-Si films prepared by RF-PECVD

Author

Tang, Jilong ; Wang, Yong

Author_Institution

Nat. Key Lab. on High Power Semicond. Lasers, Changchun Univ. of Sci. & Technol., Changchun, China

fYear

2012

fDate

23-25 Aug. 2012

Firstpage

431

Lastpage

433

Abstract

Silicon-doped diamond-like carbon (DLC) films with a Si content from 6.30% to 19.73% were grown on Si substrate by radio frequency plasma-enhanced chemical vapour deposition (RF-PECVD). The influence of Si addition on the bonding structure, nanomechanical behaviour of the DLC films was investigated by Raman and X-ray photoelectron (XPS) spectroscopy, and Fourier transform infrared (FT-IR) spectroscopy. Silicon addition promoted the formation of sp3 bonding and reduced the hardness. The results show that the ratio of SiH₄ in the gas mixture was successively varied to clarify its influence on the microstructure for the DLC films.

Keywords

Fourier transform spectra; Raman spectra; X-ray photoelectron spectra; crystal microstructure; diamond-like carbon; elemental semiconductors; hardness; infrared spectra; plasma CVD; semiconductor thin films; silicon; C:Si; DLC-Si films; Fourier transform infrared spectroscopy; RF-PECVD; Raman spectroscopy; Si substrate; X-ray photoelectron spectroscopy; bonding structure; hardness; microstructure; nanomechanical behaviour; radio frequency plasma-enhanced chemical vapour deposition; silicon-doped diamond-like carbon films; sp3 bonding; Bonding; Carbon; Diamond-like carbon; Films; Microelectronics; Silicon; Substrates; Diamond-like carbon film; PECVD; Raman; XPS;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronics and Microelectronics (ICOM), 2012 International Conference on

Conference_Location

Changchun, Jilin

Print_ISBN

978-1-4673-2638-4

Type

conf

DOI

10.1109/ICoOM.2012.6316308

Filename

6316308