The efficiency of class-F and inverse class-F amplifiers

Author

Inoue, Akira ; Ohta, Akira ; Goto, Seiki ; Ishikawa, Takahide ; Matsuda, Yoshio

Author_Institution

High Frequency & Opt. Device Works, Mitsubishi Electr. Corp., Hyogo, Japan

Volume

3

fYear

2004

fDate

6-11 June 2004

Firstpage

1947

Abstract

The efficiency of class-F and inverse class-F amplifiers are studied using measurements and theories. At high quiescent current, inverse class-F amplifiers show higher efficiency than that of class-F. This phenomenon is experimentally ensured with GaAs pHEMTs and GaAs HBTs. A harmonic balanced simulation also supports this result, and reveals the difference between the classes. An analytic waveform analysis with restricted harmonics explains this dependence on the quiescent currents.

Keywords

III-V semiconductors; electric current; gallium arsenide; heterojunction bipolar transistors; high electron mobility transistors; power amplifiers; semiconductor device measurement; waveform analysis; FET; GaAs; harmonic balanced simulation; heterojunction bipolar transistor; inverse class-F amplifier; pHEMT; power amplifier; quiescent current; restricted harmonics; waveform analysis; Current measurement; FETs; Gallium arsenide; Heterojunction bipolar transistors; Optical amplifiers; PHEMTs; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2004 IEEE MTT-S International

ISSN

0149-645X

Print_ISBN

0-7803-8331-1

Type

conf

DOI

10.1109/MWSYM.2004.1338991

Filename

1338991