Carrier Backscattering Characteristics of Strained N-MOSFET Featuring Silicon-Carbon Source/Drain Regions

Author

Ang, Kah-Wee ; Chin, Hock-Chun ; Chui, King-Jien ; Li, Ming-Fu ; Samudra, Ganesh ; Yeo, Yee-Chia

Author_Institution

Dept. of Electr. & Comput. Eng., National Univ. of Singapore

fYear

2006

fDate

19-21 Sept. 2006

Firstpage

89

Lastpage

92

Abstract

The physics of carrier transport in a sub-90nm strained SOI n-MOSFET with silicon-carbon (SiC) source/drain (S/D) regions is investigated for the first time. Significant improvement in carrier backscattering coefficient r_sat and source injection velocity v_inj accounts for the large drive current I_Dsat enhancement in SiC S/D transistors. The improvement in r_sat, is attributed to the modulation of conduction band barrier which results in a shorter critical length for carrier backscattering. On the other hand, strain-induced conduction band valley splitting leads to a reduced electron effective mass and thus contributes to the v_inj enhancement. In addition, we evaluate the dependence of drive current performance on carrier injection velocity and ballistic efficiency in a short channel MOSFET

Keywords

MOSFET; silicon compounds; silicon-on-insulator; wide band gap semiconductors; SOI n-MOSFET; SiC; ballistic efficiency; carrier backscattering characteristics; carrier injection velocity; carrier transport; conduction band barrier; drive current; silicon carbon; source/drain regions; strain-induced conduction band; Backscatter; Capacitive sensors; Effective mass; Electrons; Laboratories; MOSFET circuits; Physics; Silicon carbide; Temperature dependence; Tensile strain;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2006. ESSDERC 2006. Proceeding of the 36th European

Conference_Location

Montreux

ISSN

1930-8876

Print_ISBN

1-4244-0301-4

Type

conf

DOI

10.1109/ESSDER.2006.307645

Filename

4099863