Title :
Effects of quantum confinement in the electronic structure of InP quantum dots
Author :
Menoni, C.S. ; Miao, Lei ; Patel, D. ; Micic, O.I. ; Nozik, A.J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Colorado State Univ., Fort Collins, CO, USA
Abstract :
We have investigated the effect of quantum confinement on the electronic structure of InP quantum dots (QDs). Quantum confinement is predicted to reduce the indirect state separation by 300 meV in 3.5 nm InP QDs compared to bulk. Although confinement alone can not, in this case, result in a direct-to indirect transition at ambient conditions, these transitions can be observed at high pressures where the separation of the conduction band extrema is further reduced
Keywords :
III-V semiconductors; conduction bands; indium compounds; semiconductor quantum dots; 300 meV; InP; InP quantum dots; ambient conditions; conduction band extrema; direct-to indirect transition; electronic structure; high pressures; indirect state separation; quantum confinement; Carrier confinement; Effective mass; Indium phosphide; Laboratories; Photonic band gap; Potential well; Quantum computing; Quantum dots; Renewable energy resources; US Department of Transportation;
Conference_Titel :
LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5634-9
DOI :
10.1109/LEOS.1999.813534
