Title :
High reliability, high power InGaAs/AlGaAs 980 nm distributed feedback lasers with nonabsorbing mirrors
Author :
Lammert, R.M. ; Ungar, J.E. ; Qi, H. ; Oh, S.W. ; Osowski, M.L. ; Chaim, N. Bar
Author_Institution :
Ortel Corp., Alhambra, CA, USA
Abstract :
Summary form only given. The InGaAs-GaAs material system has received much. attention as sources for pumping Er-doped fiber amplifiers (EDFAs) near 980 nm. InGaAs-GaAs Fabry-Perot laser diodes have exhibited single spatial mode powers in excess of 200 mW, however, these devices can suffer from longitudinal mode shifting and instability resulting from optical feedback. Longitudinal mode stability coupled with lower temperature sensitivity make 980 nm high-power distributed feedback (DFB) lasers and distributed Bragg reflector (DBR) lasers desirable sources for pumping EDFAs
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; distributed feedback lasers; gallium arsenide; indium compounds; laser mirrors; laser modes; laser reliability; laser transitions; optical pumping; semiconductor lasers; 200 mW; 980 nm; Er-doped fiber amplifier pumping; InGaAs-GaAs; InGaAs-GaAs Fabry-Perot laser diodes; InGaAs-GaAs material system; high power InGaAs-AlGaAs 980 nm distributed feedback lasers; high reliability; high-power DFB lasers; longitudinal mode shifting; lower temperature sensitivity; nonabsorbing mirrors; optical feedback; single spatial mode powers; Distributed Bragg reflectors; Distributed feedback devices; Erbium-doped fiber amplifier; Indium gallium arsenide; Laser feedback; Laser modes; Laser stability; Optical materials; Power system reliability; Pump lasers;
Conference_Titel :
LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5634-9
DOI :
10.1109/LEOS.1999.813545
