High Performance pMOSFET with ALD-TiN/HfO2 Gate Stack on (110) Substrate by Low Temperature Process

Author

Tai, K. ; Hirano, T. ; Yamaguchi, S. ; Ando, T. ; Hiyama, S. ; Wang, J. ; Nagahama, Y. ; Kato, T. ; Yamanaka, M. ; Terauchi, S. ; Kanda, S. ; Yamamoto, R. ; Tateshita, Y. ; Tagawa, Y. ; Iwamoto, H. ; Saito, M. ; Nagashima, N. ; Kadomura, S.

Author_Institution

Semicond. Bus. Unit, Sony Corp., Atsugi

fYear

2006

fDate

19-21 Sept. 2006

Firstpage

121

Lastpage

124

Abstract

We have developed a high performance pMOSFET with ALD-TiN/HfO₂ gate stacks on (110) substrate using gate last process at low temperature. High work function and low gate leakage current are obtained. An extremely high mobility equivalent to P+poly-Si/SiO₂ on (110) substrate (171 cm²/Vs at 0.5 MV/cm) is achieved with ALD-TiN/HfO₂ on (110) substrate in the thinner Tinv region of 1.7 nm. Vth roll-off characteristics are well controlled down to 50 nm. A high drive current of 380 uA/um at I _off = 1 uA/um is achieved at Vdd = 1.0 V. The drive current of ALD-TiN/HfO₂ gate stack on (110) substrate is improved 1.4 times compared with (100) substrate and 2.4 times compared with P+poly-Si/SiO₂ on (100) substrate

Keywords

MOSFET; atomic layer deposition; hafnium compounds; leakage currents; silicon compounds; substrates; tin compounds; (100) substrate; (110) substrate; 1 V; 1.7 nm; 50 nm; ALD; Si-SiO₂; TiN-HfO₂; leakage current; low temperature process; pMOSFET; work function; Annealing; CMOS technology; Electrodes; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; MOSFET circuits; Substrates; Temperature; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2006. ESSDERC 2006. Proceeding of the 36th European

Conference_Location

Montreux

ISSN

1930-8876

Print_ISBN

1-4244-0301-4

Type

conf

DOI

10.1109/ESSDER.2006.307653

Filename

4099871