Statistical characterization and the impact of percent phosphorous in LTO-PSG film on opto and small signal technology

Author

Warner, Don ; Tanghal, Eileen ; Sundaram, Sam

Author_Institution

Opto & Small Signal Products Div., Motorola Inc., Phoenix, AZ, USA

fYear

1996

fDate

26-28 Nov 1996

Firstpage

135

Lastpage

139

Abstract

The physical and chemical effects and particularly the impact of Phosphosilicate glass (LTO-PSG) composition on manufacturing of Opto and Small Signal devices is reviewed in detail. Statistical design and response surface methodology (RSM) are extensively used to optimize the process conditions of PSG film for reliable fabrication of these devices. This paper focuses on LTO-PSG deposition variables and how the deposition conditions can be optimized for the best process conditions. Finally, the effect of percentage of Phosphorous in LTO-PSG is discussed in terms of photolithography etch process simplification

Keywords

chemical vapour deposition; design of experiments; etching; oxidation; phosphosilicate glasses; photolithography; phototransistors; semiconductor technology; silicon compounds; size control; surface fitting; CVD; LTO-PSG film; P percentage effect; P2O5-SiO2; PSG; PSG composition; SiO₂; critical dimension control; deposition variables; low temperature oxide; opto-transistors; photolithography etch process simplification; process conditions optimization; reliable fabrication; response surface methodology; small signal technology; statistical design; Chemical products; Chemical technology; Design optimization; Etching; Fabrication; Fluid flow; Glass; Manufacturing processes; Signal processing; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics, 1996. ICSE '96. Proceedings., 1996 IEEE International Conference on

Conference_Location

Penang

Print_ISBN

0-7803-3388-8

Type

conf

DOI

10.1109/SMELEC.1996.616469

Filename

616469