New TIT Capacitor with ZrO2/Al2O3/ZrO2 dielectrics for 60nm and below DRAMs

Author

Ho Jin Cho ; Young Dae Kim ; Dong Su Park ; Lee, Euna ; Cheol Hwan Park ; Jun Soo Jang ; Keum Bum Lee ; Hai Won Kim ; Soo Jin Chae ; Young Jong Ki ; Il Keun Han ; Yong Wook Song

Author_Institution

R & D Div., Hynix Semicond. Inc., Icheon

fYear

2006

fDate

19-21 Sept. 2006

Firstpage

146

Lastpage

149

Abstract

New ZrO₂/Al₂O₃/ZrO₂ (ZAZ) dielectric film was successfully developed for DRAM capacitor dielectrics of 60nm and below technologies. ZAZ dielectric film grown by ALD has a mixture structure of crystalline phase ZrO₂ and amorphous phase Al₂O₃ in order to optimize dielectric properties. ZAZ TIT capacitor showed small Tox.eq of 8.5 Aring and low leakage current density of 0.35fA/cell, which meet leakage current criteria of 0.5fA/cell for mass production. ZAZ TIT capacitor showed smaller cap leak fail bit than HAH capacitor and stable leakage current up to 550degC anneal. TDDB (time dependent dielectric breakdown) behavior reliably satisfied the 10-year lifetime criteria within operation voltage range

Keywords

DRAM chips; aluminium compounds; dielectric thin films; electric breakdown; thin film capacitors; zirconium compounds; 60 nm; DRAM capacitor dielectrics; TIT capacitor; ZAZ; ZrO₂-Al₂O₃-ZrO₂; dielectric film; stable leakage current; time dependent dielectric breakdown; Aluminum oxide; Amorphous materials; Annealing; Capacitors; Crystallization; Dielectric breakdown; Dielectric films; Leakage current; Mass production; Random access memory;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2006. ESSDERC 2006. Proceeding of the 36th European

Conference_Location

Montreux

ISSN

1930-8876

Print_ISBN

1-4244-0301-4

Type

conf

DOI

10.1109/ESSDER.2006.307659

Filename

4099877