Title :
Approaches to CMOS integration of epitaxial gadolinium oxide high-K dielectrics
Author :
Gottlob, H.D.B. ; Echtermeyer, T. ; Mollenhauer, T. ; Schmidt, M. ; Efavi, J.K. ; Wahlbrink, T. ; Lemme, M.C. ; Kurz, H. ; Endres, R. ; Stefanov, Y. ; Schwalke, U. ; Czernohorsky, M. ; Bugiel, E. ; Fissel, A. ; Osten, H.J.
Author_Institution :
Adv. Microelectron. Center Aachen, AMO GmbH, Aachen
Abstract :
Two process concepts for integration of novel gate stacks with epitaxial high-k dielectrics and metal gate electrodes are presented. A "gate first" process based on a planar gate stack on ultra thin SOI material has been used for successful fabrication of MOSFETs with TiN/Gd 2O3 gate stack. Furthermore MOSFETs with W/Gd2O3 gate stack have been fabricated with a replacement gate process. This is the first successful attempt to integrate crystalline high-K dielectrics into a "gentle" damascene metal gate process in order to reduce process induced oxide damages
Keywords :
CMOS integrated circuits; MOSFET; gadolinium compounds; high-k dielectric thin films; semiconductor technology; silicon-on-insulator; titanium compounds; tungsten; CMOS integration; MOSFET; TiN-Gd2O3; W-Gd2O3; crystalline high-K dielectric integration; damascene metal gate; epitaxial high-k dielectrics; gate first process; gate stack integration; metal gate electrodes; ultra thin SOI material; CMOS technology; Crystallization; Dielectric materials; Electrodes; Fabrication; High K dielectric materials; High-K gate dielectrics; MOSFETs; Molecular beam epitaxial growth; Tin;
Conference_Titel :
Solid-State Device Research Conference, 2006. ESSDERC 2006. Proceeding of the 36th European
Conference_Location :
Montreux
Print_ISBN :
1-4244-0301-4
DOI :
10.1109/ESSDER.2006.307660
