Title :
Simulation study of single event effect for different N-well and Deep-N-well doping in 65nm triple-well CMOS devices
Author :
Wang, Tianqi ; Xiao, Liyi ; Huang, Qingfeng
Author_Institution :
Micro-Electron. Center, Harbin Inst. of Technol., Harbin, China
Abstract :
In this paper, single event effect (SEE) for different N-well and Deep N-well doping in triple-well process is studied by TCAD simulations. Charge collection in combinational circuits and charge sharing in SRAM cells are discussed in 65 nm triple-well CMOS technology. The results showed that devices with different doping have different ability of charge collection and charge sharing. Heavy ion strike induce single transistor DoublePulses are observed, for the doping of 1×1018 cm-3 and 5×1018 cm-3. Single event upset (SEU) recovery is also discussed for different doping in SRAM cells.
Keywords :
CMOS integrated circuits; SRAM chips; combinational circuits; semiconductor doping; SRAM cells; TCAD simulations; charge collection; charge sharing; combinational circuits; deep-N-well doping; heavy ion strike; single event effect; single event upset recovery; single transistor double pulses; size 65 nm; triple-well CMOS devices; CMOS integrated circuits; Doping; MOS devices; Random access memory; Semiconductor device modeling; Semiconductor process modeling; Single event upset; DP(double pulse); SEU recovery; TCAD; charge collection; doping density; triple-well;
Conference_Titel :
Optoelectronics and Microelectronics (ICOM), 2012 International Conference on
Conference_Location :
Changchun, Jilin
Print_ISBN :
978-1-4673-2638-4
DOI :
10.1109/ICoOM.2012.6316326
