DocumentCode :
3493459
Title :
Analysis of LDMOS for effect of finger and device-width on gate feedback charge
Author :
Permata, Prima Sukma ; Anwar, Mohammed Sadique ; Siddiqui, Md Imran ; Yang, Shao-Ming ; Tsai, Jung-Ruey ; Sheu, Gene
Author_Institution :
Dept. of Comput. Sci. & Inf. Eng., Asia Univ., Taichung, Taiwan
fYear :
2012
fDate :
23-25 Aug. 2012
Firstpage :
519
Lastpage :
523
Abstract :
In this paper, we have simulated and analyzed the effect of fingers, device-width and main power supply (Vdd) on gate feedback charge (Qgd) and switching time of LDMOS by gate charge test circuit simulation. Gate feedback charge is the charge which is required to fill the gate-drain “Miller” capacitance. Smaller area will have smaller charge and switching time. It has been seen in our simulation that gate feedback charge (Qgd) and switching time increased more linearly with device width rather than no. of fingers and main power supply (Vdd). We have successfully simulated that to improve the device´s power by increased the area, multi finger design is better than the width extension due to the lower gate feedback charge and faster switching time.
Keywords :
MOSFET; circuit simulation; LDMOS; device width; gate charge test circuit simulation; gate feedback charge; gate-drain Miller capacitance; multifinger design; switching time; Capacitance; Educational institutions; Fingers; Logic gates; Microelectronics; Power MOSFET; Switches; Device-width Effects; Gate Feedback Charge; Number of Fingers; Switching time;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronics and Microelectronics (ICOM), 2012 International Conference on
Conference_Location :
Changchun, Jilin
Print_ISBN :
978-1-4673-2638-4
Type :
conf
DOI :
10.1109/ICoOM.2012.6316329
Filename :
6316329
Link To Document :
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