• DocumentCode
    3493508
  • Title

    A 20 Gb/s InP DHBT driver IC with high output voltage swing for direct and external laser modulation

  • Author

    Meghelli, M. ; Bouché, M. ; Konczykowska, A.

  • Author_Institution
    Lab. de Bagneux, CNET, Bagneux, France
  • fYear
    1997
  • fDate
    28-30 Sep 1997
  • Firstpage
    113
  • Lastpage
    115
  • Abstract
    A 20 Gb/s driver IC developed for direct and external laser modulation is presented. The single-ended output voltage swing is as high as 4 Vpp (8 Vpp differential) at 50 Ω load. The circuit was fabricated in a standard InP-InGaAs double heterojunction bipolar transistor technology
  • Keywords
    indium compounds; 20 Gbit/s; 4 V; 8 V; DHBT technology; InP DHBT driver IC; InP-InGaAs; direct laser modulation; double heterojunction bipolar transistors; external laser modulation; high output voltage swing; DH-HEMTs; Double heterojunction bipolar transistors; Driver circuits; Gold; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Jitter; Resistors; Switches; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 1997. Proceedings of the
  • Conference_Location
    Minneapolis, MN
  • ISSN
    1088-9299
  • Print_ISBN
    0-7803-3916-9
  • Type

    conf

  • DOI
    10.1109/BIPOL.1997.647410
  • Filename
    647410
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3493508