DocumentCode :
3493508
Title :
A 20 Gb/s InP DHBT driver IC with high output voltage swing for direct and external laser modulation
Author :
Meghelli, M. ; Bouché, M. ; Konczykowska, A.
Author_Institution :
Lab. de Bagneux, CNET, Bagneux, France
fYear :
1997
fDate :
28-30 Sep 1997
Firstpage :
113
Lastpage :
115
Abstract :
A 20 Gb/s driver IC developed for direct and external laser modulation is presented. The single-ended output voltage swing is as high as 4 Vpp (8 Vpp differential) at 50 Ω load. The circuit was fabricated in a standard InP-InGaAs double heterojunction bipolar transistor technology
Keywords :
indium compounds; 20 Gbit/s; 4 V; 8 V; DHBT technology; InP DHBT driver IC; InP-InGaAs; direct laser modulation; double heterojunction bipolar transistors; external laser modulation; high output voltage swing; DH-HEMTs; Double heterojunction bipolar transistors; Driver circuits; Gold; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Jitter; Resistors; Switches; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1997. Proceedings of the
Conference_Location :
Minneapolis, MN
ISSN :
1088-9299
Print_ISBN :
0-7803-3916-9
Type :
conf
DOI :
10.1109/BIPOL.1997.647410
Filename :
647410
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3493508
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