Title :
Assessment of the Impact of Biaxial Strain on the Drain Current of Decanometric n-MOSFET
Author :
Ponton, D. ; Lucci, L. ; Palestri, P. ; Esseni, D. ; Selmi, L.
Author_Institution :
DIEGM, Udine Univ.
Abstract :
In this paper, the authors use multi-subband-Monte-Carlo simulations to investigate the on-current increment induced by biaxial strain in n-MOSFETs featuring bulk and double-gate architecture with 25nm gate length. The effect of different scattering mechanisms and of the subband structure is analyzed in detail
Keywords :
MOSFET; Monte Carlo methods; semiconductor device models; 25 nm; biaxial strain impact; bulk architecture; decanometric n-MOSFET; double-gate architecture; drain current; multi-subband-Monte-Carlo simulation; on-current increment; scattering mechanisms; subband structure; Acoustic scattering; Calibration; Capacitive sensors; Germanium silicon alloys; MOSFET circuits; Optical scattering; Silicon germanium; Stress; Strontium; Substrates;
Conference_Titel :
Solid-State Device Research Conference, 2006. ESSDERC 2006. Proceeding of the 36th European
Conference_Location :
Montreux
Print_ISBN :
1-4244-0301-4
DOI :
10.1109/ESSDER.2006.307664
