High efficiency current-mode class-D amplifier with integrated resonator

Author

Hung, Tsai-Pi ; Metzger, Andre G. ; Zampardi, Peter J. ; Iwamoto, Masaya ; Asbeck, Peter M.

Author_Institution

Dept. of Electr. Eng., Californai Univ., San Diego, CA, USA

Volume

3

fYear

2004

fDate

6-11 June 2004

Firstpage

2035

Abstract

This paper shows that current mode class-D (CMCD) amplifiers with integrated parallel LC resonator can achieve high efficiency at RF frequencies. In contrast to the conventional class-D amplifier, output shunt capacitance discharge loss is eliminated in a CMCD amplifier topology by satisfying the zero voltage switching (ZVS) condition. To reduce parasitic resistance, bondwires are utilized to implement a high Q inductor in the LC resonator. An experimental CMCD amplifier with collector efficiency of 78.5% at output power of 29.5dBm (0.89W) is demonstrated using GaAs HBTs at 700 MHz.

Keywords

III-V semiconductors; current-mode circuits; gallium arsenide; heterojunction bipolar transistors; microwave power amplifiers; resonators; 0.89 W; 700 MHz; CMCD amplifier topology; GaAs; RF frequencies; bondwire inductor; current-mode class-D amplifier; heterojunction bipolar transistors; integrated resonator; output shunt capacitance discharge loss; parallel LC resonator; parasitic resistance; power amplifiers; zero voltage switching condition; Bonding; Inductors; Parasitic capacitance; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Shunt (electrical); Topology; Zero voltage switching;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2004 IEEE MTT-S International

ISSN

0149-645X

Print_ISBN

0-7803-8331-1

Type

conf

DOI

10.1109/MWSYM.2004.1339013

Filename

1339013