Monte Carlo Simulation of the Performance Dependence on Surface and Channel Orientation in Scaled pFinFETs

Author

Bufler, F.M. ; Erlebach, A.

Author_Institution

Inst. fur Integrierte Syst., ETH, Zurich

fYear

2006

fDate

Sept. 2006

Firstpage

174

Lastpage

177

Abstract

Full-band Monte Carlo simulations are performed for FinFETs with gate lengths from 50 nm down to 10 nm comparing the improvement of (110) surface pFinFETs with channel directions in lang-110rang, lang-111rang and lang001rang to the results of the standard (001)/ lang110rang CMOS configuration. Due to the reduced importance of surface scattering in (a) the undoped pFinFET channel and (b) the short-channel regime the advantage of the (110) surface orientation in long-channel bulk pMOSFETs vanishes in the scaling limit, while the (001) channel direction becomes more beneficial. Consequently, our device simulation analysis suggests that a (-110) wafer with (110)/lang001rang pFinFETs and (00-l)/lang001rang nFinFETs is superior to a (00-1) wafer with (110)/ lang-100rang pFinFETs and (010)/lang-100rang nFinFETs in the ultrashort-channel regime

Keywords

MOSFET; Monte Carlo methods; semiconductor device models; surface scattering; (110) surface pFinFET; 10 to 50 nm; CMOS configuration; Monte Carlo simulation; channel orientation; long-channel bulk pMOSFET; performance dependence; scaled pFinFET; short-channel regime; surface orientation; surface scattering; Computational modeling; Crystallography; Electron mobility; FinFETs; Irrigation; MOSFETs; Monte Carlo methods; Scattering; Silicon; Velocity measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2006. ESSDERC 2006. Proceeding of the 36th European

Conference_Location

Montreux

ISSN

1930-8876

Print_ISBN

1-4244-0301-4

Type

conf

DOI

10.1109/ESSDER.2006.307666

Filename

4099884