• DocumentCode
    3493598
  • Title

    Effects of ion barrier film on image noise in generation III image tube

  • Author

    Duanmu, Qingduo ; Li, Ye ; Fu, Shencheng ; Wang, Guozheng ; Song, De ; Wang, Xin ; Qin, Xulei

  • Author_Institution
    Changchun Univ. of Sci. & Technol., Changchun, China
  • fYear
    2012
  • fDate
    23-25 Aug. 2012
  • Firstpage
    549
  • Lastpage
    552
  • Abstract
    In the third-generation image tube, the input surface of microchannel plate (MCP) is typically coated with an ultra-thin dielectric film, called the ion barrier film (IBF), to prevent ions generated in MCP during operation from migrating back to the photocathode and damaging the activation layer of photocathode, and prolong the operation lifetime. But IBF will serves as a scattering center for electron signal and reduce the signal-to-noise (SNR) of the image tube. In this paper, we present overviews of the IBF roles in third-generation image tubes, and the results of Monte-Carlo simulation on electron transmission through the Al2O3 dielectric film with varying electron energy and film thickness. We also calculated and analyzed the noise factors of Al2O3 IBF by Monte-Carlo simulation and the quantum noise model. A method of Temporal Domain Segmentation was proposed for statistical calculation. The results show the noise factor of IBF from quantum noise model is 1.07-1.28 at working voltage of 500-800V, and the one from Monte Carlo Simulation is 1.6-2.6.
  • Keywords
    Monte Carlo methods; aluminium compounds; coatings; dielectric thin films; image denoising; image segmentation; microchannel plates; photocathodes; pipes; quantum noise; statistical analysis; Al2O3; IBF effect; MCP surface; Monte-Carlo simulation; SNR reduction; activation layer damage; electron signal scattering center; electron transmission; generation III image tube; image noise; ion barrier film effect; ion generation; microchannel plate surface; noise factor; photocathode; quantum noise model; signal-to-noise reduction; statistical calculation; temporal domain segmentation method; ultrathin dielectric film thickness; voltage 500 V to 800 V; Aluminum oxide; Cathodes; Electron tubes; Films; Monte Carlo methods; Noise; Scattering; image tube; ion barrier film; noise factor; signal-to-noise; simulation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronics and Microelectronics (ICOM), 2012 International Conference on
  • Conference_Location
    Changchun, Jilin
  • Print_ISBN
    978-1-4673-2638-4
  • Type

    conf

  • DOI
    10.1109/ICoOM.2012.6316335
  • Filename
    6316335