A novel passivated Al(In)As/InP current blocking grating for 1.3 μm AlGaInAs/InP complex-coupled DFB laser fabrication

Author

Bo Chen ; Jin-Yuan Zhang ; Xiao-Jie Wang

Author_Institution

Inst. of Semicond., Acad. Sinica, Beijing, China

Volume

1

fYear

1999

fDate

1999

Firstpage

331

Abstract

For improvements of the temperature characteristics of AlGaInAs/InP MQW-SCH DFB lasers for uncooled light source application, we proposed and demonstrated experimentally a new CB grating which can be fabricated through a passivated AlInAs current blocking region. The CW operation at room temperature of the 1.3 μm AlGaInAs/InP complex-coupled DFB laser was realized

Keywords

III-V semiconductors; aluminium compounds; diffraction gratings; distributed feedback lasers; gallium arsenide; indium compounds; laser transitions; optical transmitters; quantum well lasers; 1.3 mum; 293 to 298 K; AlGaInAs-InP; AlGaInAs/InP MQW-SCH DFB lasers; AlGaInAs/InP complex-coupled DFB laser fabrication; AlInAs-InP; CW operation; passivated Al(In)As/InP current blocking grating; room temperature; temperature characteristics; uncooled light source application; Distributed feedback devices; Etching; Fiber lasers; Gratings; Indium phosphide; Laser feedback; Laser theory; Semiconductor lasers; Surface emitting lasers; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-5634-9

Type

conf

DOI

10.1109/LEOS.1999.813617

Filename

813617