Evaluation of the degradation of floating-gate memories with Al2O3 tunnel oxide

Author

Buckley, J. ; Molas, G. ; Gély, M. ; Martin, F. ; De Salvo, B. ; Deleonibus, S. ; Pananakakis, G. ; Bongiorno, C. ; Lombardo, S.

Author_Institution

CEA-LETI, Grenoble

fYear

2006

fDate

Sept. 2006

Firstpage

246

Lastpage

249

Abstract

Replacing the tunnel oxide of non-volatile memories by a high-k dielectric is addressed in this paper. This work reports in its first part an experimental study of conduction and trapping in Al₂O ₃ layers. The experimental data of these layers is then integrated in a novel endurance model suitable for flash memories with high-k tunnel oxide. Simulation results show that low (+8/-7V) operating voltages can be used to obtain large threshold voltage shifts, and despite a great amount of trapped negative charges (several 10₁₂/cm²), the programming window isn´t closed after 10⁷ write/erase (W/E) cycles

Keywords

alumina; high-k dielectric thin films; random-access storage; write-once storage; Al₂O₃; floating-gate memories degradation; high-k dielectric; high-k tunnel oxide; nonvolatile memories; write/erase cycles; Aluminum oxide; Capacitors; Degradation; Dielectric substrates; Electron traps; Flash memory; High K dielectric materials; High-K gate dielectrics; Nonvolatile memory; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2006. ESSDERC 2006. Proceeding of the 36th European

Conference_Location

Montreux

ISSN

1930-8876

Print_ISBN

1-4244-0301-4

Type

conf

DOI

10.1109/ESSDER.2006.307684

Filename

4099902