• DocumentCode
    349394
  • Title

    Low threshold current, high efficiency 1.3 μm wavelength InGaAsN-GaAs based quantum well lasers

  • Author

    Gokhale, Milind R. ; Wei, Jian ; Studenkov, Pavel ; Forrest, Stephen R.

  • Author_Institution
    Center for Photonics & Optoelectron. Mater., Princeton Univ., NJ, USA
  • Volume
    1
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    366
  • Abstract
    We report continuous wave (CW) operation for InGaAsN lasers up to 1.32 μm. Also record low threshold current density JTH=2.7 kA/cm2 (CW) at λ=1.3 μm, and record high output powers of 300 mW are demonstrated for nitrogen-based narrow ridge lasers
  • Keywords
    III-V semiconductors; current density; gallium arsenide; indium compounds; laser transitions; quantum well lasers; 1.3 mum; 300 mW; CW operation; InGaAsN-GaAs; InGaAsN-GaAs based quantum well lasers; high efficiency; high output powers; low threshold current; low threshold current density; nitrogen-based narrow ridge lasers; Mars; Optical pulses; Power generation; Power lasers; Quantum well lasers; Temperature; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
  • Conference_Location
    San Francisco, CA
  • ISSN
    1092-8081
  • Print_ISBN
    0-7803-5634-9
  • Type

    conf

  • DOI
    10.1109/LEOS.1999.813635
  • Filename
    813635
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=349394