• DocumentCode
    3493949
  • Title

    Progress in AlGaInP strained layer quantum well semiconductor lasers

  • Author

    Valster, A.

  • Author_Institution
    Philips Optoelectron. Centre, Eindhoven, Netherlands
  • Volume
    1
  • fYear
    1994
  • fDate
    31 Oct-3 Nov 1994
  • Firstpage
    313
  • Abstract
    Visible light emitting semiconductor lasers have become increasingly attractive as light sources in various applications such as data storage, bar-code readers, laser-printers and solid laser pumping. This article reviews the recent progress of AlGaInP semiconductor lasers emitting in the 630 nm band. Significant improvement of the performance of the lasers over the last several years has been obtained by the replacement of the Ga0.5In0.5P bulk layer by Ga xIn1-xP strained quantum well layers in the active region
  • Keywords
    quantum well lasers; 630 nm; AlGaInP; strained quantum well; visible light emitting semiconductor lasers; Capacitive sensors; Etching; Photonic band gap; Power generation; Pump lasers; Quantum well lasers; Semiconductor lasers; Solid lasers; Threshold current; Waveguide lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
  • Conference_Location
    Boston, MA
  • Print_ISBN
    0-7803-1470-0
  • Type

    conf

  • DOI
    10.1109/LEOS.1994.587019
  • Filename
    587019
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3493949