Comparison of GaInNAs/GaAs and strain-compensated InGaAs/GaAsP quantum wells for 1200-1300 nm diode lasers

Author

Hetterich, M. ; Dawson, M.D. ; Egorov, A.Yu. ; Bernklau, D. ; Riechert, H. ; Bland, S.W. ; Davies, J.I. ; Geen, M.D.

Author_Institution

Inst. of Photonics, Strathclyde Univ., Glasgow, UK

Volume

1

fYear

1999

fDate

1999

Firstpage

368

Abstract

We investigate the optical properties (photoluminescence and photoluminescence excitation spectra) of GaInNAs/GaAs quantum wells and discuss problems caused by the presence of nitrogen in the wells. The use of InGaAs(N)/GaAsP strain-balanced structures is suggested to improve device characteristics through the reduction of the nitrogen amount required to achieve 1.3 μm emission. Especially, we demonstrate that 1.2 μm emission can already be achieved in InGaAs/GaAsP structures without any nitrogen

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser transitions; photoluminescence; quantum well lasers; semiconductor quantum wells; 1200 to 1300 nm; 1200-1300 nm diode lasers; GaInNAs-GaAs; GaInNAs/GaAs quantum wells; InGaAs(N)/GaAsP strain-balanced structures; InGaAs-GaAsP; InGaAsN-GaAsP; device characteristics; optical properties; photoluminescence; photoluminescence excitation spectra; strain-compensated InGaAs/GaAsP quantum wells; Diode lasers; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Nitrogen; Optical fiber communication; Photonics; Plasma temperature; Quantum well devices; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-5634-9

Type

conf

DOI

10.1109/LEOS.1999.813636

Filename

813636