• DocumentCode
    3494032
  • Title

    Power trench MOSFETs with very low specific on-resistance for 25V applications

  • Author

    Goarin, Pierre ; van Dalen, R. ; Koops, Gerhard ; Le Cam, C.

  • Author_Institution
    Philips Res. Leuven
  • fYear
    2006
  • fDate
    19-21 Sept. 2006
  • Firstpage
    274
  • Lastpage
    277
  • Abstract
    In this paper, the authors present an investigation into the benefits DUV lithography for the manufacturing of trench MOSFETs and its impact on device performance. The authors discuss experimental results for devices with a pitch size down to 0.6 mum fabricated with an unconventional implant topology and a simplified manufacturing scheme. The fabricated trench MOSFETs are benchmarked against previously published trench MOS technologies by de-embedding the parasitic substrate resistance, revealing a record-low specific on-resistance of 5.3mOmega-mm2 at a breakdown voltage of 30V(Vgs = 10V)
  • Keywords
    electric breakdown; ion implantation; power MOSFET; ultraviolet lithography; 0.6 micron; 25 V; 30 V; DUV lithography; breakdown voltage; de-embedding; implant topology; parasitic substrate resistance; power trench MOSFET; Doping; Etching; Immune system; Implants; Lithography; MOSFETs; Manufacturing processes; Pulp manufacturing; Silicon; Topology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2006. ESSDERC 2006. Proceeding of the 36th European
  • Conference_Location
    Montreux
  • ISSN
    1930-8876
  • Print_ISBN
    1-4244-0301-4
  • Type

    conf

  • DOI
    10.1109/ESSDER.2006.307691
  • Filename
    4099909
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3494032