Experimental and simulation study of the Schottky barrier lowering by substrate doping variation for PtSi Source/Drain SBFETs

Author

Lousberg, Gregory P. ; Yu, H.Y. ; Froment, B. ; Li, M.-F. ; Augendre, E. ; De Keersgieter, An ; Demeurisse, C. ; Brus, S. ; Degroote, B. ; Hoffmann, T. ; Lauwers, A. ; DePotter, M. ; Kubicek, S. ; Anil, K. ; Absil, P. ; Jurczak, M. ; Biesemans, S.

fYear

2006

fDate

19-21 Sept. 2006

Firstpage

286

Lastpage

289

Abstract

In this paper, the authors study experimentally and numerically the Schottky barrier height (SBH) lowering of Pt silicide/n-Si diodes and its implications to Schottky-barrier (SB) source/drain p-FETs. The authors demonstrate that hole SBH can be lowered through an image-force mechanism by increasing the n-Si substrate doping, which leads to a substantial gain of the drive current in the long-channel bulk p-SBFETs. Numerical simulations show that the channel doping concentration is also critical for short-channel n- & p-SOI SBFETs performance

Keywords

Schottky barriers; Schottky gate field effect transistors; numerical analysis; semiconductor diodes; semiconductor doping; silicon-on-insulator; PtSi; SOI SBFET; Schottky barrier lowering; drive current; numerical simulations; semiconductor diodes; source/drain SBFET; substrate doping variation; CMOS technology; Doping; FETs; Fabrication; Numerical simulation; Schottky barriers; Schottky diodes; Silicides; Silicon compounds; Silicon on insulator technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2006. ESSDERC 2006. Proceeding of the 36th European

Conference_Location

Montreux

ISSN

1930-8876

Print_ISBN

1-4244-0301-4

Type

conf

DOI

10.1109/ESSDER.2006.307694

Filename

4099912