High efficiency and high stability 1KW RF generator for plasma applications

In this paper, a new 1 kW RF generator with high efficiency and high stability is designed and fabricated for plasma applications. The efficiency of a power amplifier in the RF generator is improved by using class E amplifier that consists of one push pull MOSFET and high current rive IC instead of class C amplifier composed several single ended MOSFET in conventional RF generator. Switchable damper that allows to select three different modes of amplifiers for considering efficiency and stability is added into the amplifier. The Proposed in this paper improves the driver efficiency more than 50%, final stage efficiency more than 10%, and total efficiency of 7.3% compared to a conventional RF generator. This RF generator can be applied to plasma etching or plasma deposition, new atmospheric pressure plasma application, and medical equipment.