High-frequency characteristics of a quantum well diode

Author

Ershov, M. ; Ryzhii, V. ; Saito, K.

Author_Institution

Dept. of Comput. Hardware, Univ. of Aizu, Japan

fYear

1996

fDate

26-28 Nov 1996

Firstpage

154

Lastpage

157

Abstract

High-frequency characteristics of a quantum well (QW) diode with thermionic electron transport are reported. The frequency-dependent admittance of the QW diode is obtained using a rigorous self-consistent small-signal analysis. The frequency dependencies of the QW diode capacitance and conductance are governed by a characteristic time of the recharging of the QW, which depends strongly on temperature and device structural parameters. Experimental data on conductance and capacitance of the QW diode as functions of temperature and frequency can be used to extract the parameters of the QW, such as QW recombination velocity and ionization energy

Keywords

capacitance; electric admittance; electron-hole recombination; semiconductor device models; semiconductor diodes; semiconductor quantum wells; space-charge-limited conduction; QW recharging; analytical model; capacitance; characteristic time; conductance; device structural parameters; frequency-dependent admittance; high-frequency characteristics; ionization energy; n⁺-i-n⁺ diode; quantum well diode; recombination velocity; self-consistent small-signal analysis; space charge limited currents; temperature dependence; thermionic electron transport; Admittance; Data mining; Diodes; Electrons; Frequency; Ionization; Quantum capacitance; Radiative recombination; Structural engineering; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics, 1996. ICSE '96. Proceedings., 1996 IEEE International Conference on

Conference_Location

Penang

Print_ISBN

0-7803-3388-8

Type

conf

DOI

10.1109/SMELEC.1996.616473

Filename

616473