DocumentCode :
349426
Title :
Comparison of silicon etching properties between F- negative ion and SF3+ positive ion-beam etchings
Author :
Ishikawa, Junzo ; Tsuji, Hiroshi ; Shibutani, Kazuma ; Ikai, Hiroshi ; Gotoh, Yasuhito
Author_Institution :
Dept. of Electron. Sci. & Eng., Kyoto Univ., Japan
Volume :
2
fYear :
1999
fDate :
36495
Firstpage :
716
Abstract :
Etching properties of Si substrate by using negative-ion (F- ) and positive-ion (SF3+) beams were studied. These are dominant ions in pulse-modulated SF6 plasma with a alternate bias. F- ions were extracted from a RF plasma-sputter-type heavy negative ion source by using SF6 gas as a ionized material. SF3+ ion was also extracted from a SF6 plasma of the source. In the experiment, p-Si substrates and silicon oxides covered with a gold-plated tungsten mesh (100 mesh/inch) were etched by the ion beam at an energy of 50-900 eV with a current density of 3-16 μA/cm2. Both etching rates for these ions showed a linear dependence on ion velocity. Chemical sputtering is considered to be dominant process of etching in the low energy range. Threshold etching energies of Si by F- was 4.8 eV and larger that 21 eV by SF3+. This is because the molecule ion required dissociation energy. For one fluorine atom at the same velocity in these two ion species, F- is considered to have an almost same ability as SF3+
Keywords :
elemental semiconductors; plasma materials processing; silicon; sputter etching; 50 to 900 eV; F; F- negative ion-beam etching; RF plasma-sputter-type heavy negative ion source; SF3; SF3+ positive ion-beam etching; Si; Si substrate; chemical sputtering; current density; dissociation energy; etching rates; gold-plated tungsten mesh; ion velocity; low energy range; pulse-modulated SF6 plasma; silicon etching properties; silicon oxides; threshold etching energies; Ion sources; Plasma applications; Plasma density; Plasma materials processing; Plasma properties; Plasma sources; Radio frequency; Silicon; Sputter etching; Tungsten;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
Type :
conf
DOI :
10.1109/IIT.1998.813767
Filename :
813767
Link To Document :
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