TiN preparation by PBII using titanium arc plasma in nitrogen gas

A PBII facility developed has a feature that a substrate is in a common chamber with a metallic arc source. The substrate is immersed in the arc plasma and a negative high voltage is applied for ion implantation. The titanium metallic arc of DC70A is produced in the chamber. A pulse modulator has specifications of 60 kV/2.5 A/30 μs, titanium nitride (TiN) films were prepared on a silicon substrate (n-n ⁺, [111], 400 μm in thickness) and titanium ions were simultaneously implanted by applying voltages 20 to 50 kV of negative polarity to the substrate. XPS results suggest that the implanted layer is formed between TiN layer and substrate by thermal diffusion under an application of -10 kV to the substrate. The crystal orientation of the film produced by pulsed voltage application in PBII is different from the DC bias case. It is strongly (200) preferred orientation for the pulsed voltages at nitrogen pressure of 0.27 Pa, while it is (111) and (220) preferred orientations for DC bias of -500 V. The film hardness increases with increasing pulse voltage, and the hardness for -40 kV pulse application is almost equal to that for DC -500 V