Title :
InGaAs/InP Single Photon Avalanche Diode Design and Characterization
Author :
Tosi, Alberto ; Cova, Sergio ; Zappa, Franco ; Itzler, Mark A. ; Ben-Michael, Rafael
Author_Institution :
Dipt. di Elettronica e Informazione, Politecnico di Milano
Abstract :
Single-photon avalanche diodes (SPAD) for 1550 nm wavelength can have InGaAs/InP structure similar to that of avalanche photodiodes of fiber optic systems, but for optimizing the device structure radically different criteria must be adopted. Such criteria are here discussed and a complete experimental characterization of the fabricated device is reported. Remarkable performance is verified also at moderately low temperature, as achieved with Peltier coolers
Keywords :
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; photodetectors; photon counting; 1550 nm; InGaAs-InP; InGaAs/InP single photon avalanche diode; InGaAs/InP structure; Peltier coolers; SPAD; avalanche photodiodes; fiber optic systems; Absorption; Breakdown voltage; Detectors; Electric breakdown; Indium gallium arsenide; Indium phosphide; Light emitting diodes; Optical design; Passivation; Photonic band gap;
Conference_Titel :
Solid-State Device Research Conference, 2006. ESSDERC 2006. Proceeding of the 36th European
Conference_Location :
Montreux
Print_ISBN :
1-4244-0301-4
DOI :
10.1109/ESSDER.2006.307706
