• DocumentCode
    3494369
  • Title

    Improved organic light-emitting devices with tunable IV by inserting a hole-blocking layer between hole-injecting layer and hole-transporting layer

  • Author

    Divayana, Y. ; Chen, B.J. ; Sun, X.W. ; Lo, G.Q. ; Sarma, K.R.

  • Author_Institution
    Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ.
  • fYear
    2006
  • fDate
    Sept. 2006
  • Firstpage
    339
  • Lastpage
    342
  • Abstract
    Insertion of hole-blocking layer (HBL) between the hole-transporting layer (HTL) and hole-injection layer for tris-(8-hydroxyquinoline) aluminum (Alq3)-based organic light-emitting device is shown to improve the current efficiency by 30%. The improvement was attributed to the better electron-hole balance in the device. Two different organic materials, 2,9-dimethyl-4, 7-diphenylphenanthroline (BCP) and Alq3 were used as HBL. Variation of HBL thickness was shown to adjust the current efficiency with the optimum thickness of 3 nm and 2 nm for BCP and Alq3, respectively. Reduction of HTL thickness was observed to reduce the operating voltage. For device with BCP HBL, the current efficiency is independent of the HTL thickness, optimum performance was observed for device with BCP and HTL thicknesses of 3 nm and 5 nm, respectively. However for device with Alq3 HBL the efficiency drops with reduction of HTL. The drop is due to electron leakage, as Alq3 HBL does not block the electron, whereby the inefficient exciplex emission was observed
  • Keywords
    hole mobility; organic compounds; organic light emitting diodes; 2 nm; 2,9-dimethyl-4, 7-diphenylphenanthroline; 3 nm; 5 nm; Alq3; electron leakage; electron-hole balance; exciplex emission; hole-blocking layer; hole-injecting layer; hole-transporting layer; organic light-emitting devices; organic materials; tris-(8-hydroxyquinoline) aluminum; tunable IV; Aluminum; Business continuity; Charge carrier processes; Electron emission; Electron mobility; Indium tin oxide; Microelectronics; Organic light emitting diodes; Spontaneous emission; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2006. ESSDERC 2006. Proceeding of the 36th European
  • Conference_Location
    Montreux
  • ISSN
    1930-8876
  • Print_ISBN
    1-4244-0301-4
  • Type

    conf

  • DOI
    10.1109/ESSDER.2006.307707
  • Filename
    4099925