Effective Mobility Extraction Based on a Split RF C-V Method for Short-Channel FinFETs

Author

Ramos, J. ; Severi, S. ; Augendre, E. ; Kerner, C. ; Chiarella, T. ; Nackaerts, A. ; Hoffmann, T. ; Collaert, N. ; Jurczak, M. ; Biesemans, S.

Author_Institution

Silicon Process & Device Technol. Div., IMEC, Leuven

fYear

2006

fDate

19-21 Sept. 2006

Firstpage

363

Lastpage

366

Abstract

In this paper, authors investigated for the first time the effective mobility (mu_eff) in short-channel FinFET transistors. Dedicated test structures for radio-frequency (RF) split C-V measurements enabled short-channel FinFET C-V measurements, and consequently, accurate effective channel length (L_eff) calculation for reliable mu_ff extraction. mu_ff is extracted for FinFETs down to dimensions of 60nm fin height, 25nm fin width and 70nm L_ff, with poly-Si/MOCVD-TiN gate stacks on SiON dielectrics. Promising non-degraded long/short channel hole mobility behavior is reported, whereas electron mobility decreases with L_ff

Keywords

MOCVD; MOSFET; dielectric materials; electron mobility; hole mobility; semiconductor device measurement; silicon; silicon compounds; titanium compounds; 25 nm; 60 nm; 70 nm; MOCVD-TiN gate stacks; RF C-V method; SiON; SiON dielectrics; TiN; channel hole mobility; effective channel length; effective mobility extraction; electron mobility; poly-Si gate stacks; radio-frequency split C-V measurements; short-channel FinFET C-V measurements; short-channel FinFET transistors; Capacitance measurement; Capacitance-voltage characteristics; Degradation; Dielectric measurements; FETs; FinFETs; Implants; Length measurement; Radio frequency; Scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2006. ESSDERC 2006. Proceeding of the 36th European

Conference_Location

Montreux

ISSN

1930-8876

Print_ISBN

1-4244-0301-4

Type

conf

DOI

10.1109/ESSDER.2006.307713

Filename

4099931