• DocumentCode
    349454
  • Title

    Peculiarities of implantation of silicon with intensive beams of B + and BF2+ ions

  • Author

    Troitski, V.Yu. ; Gerasimenko, N.N. ; Verner, I.V.

  • Author_Institution
    Res. Dev. & Production Center ORION, Moscow, Russia
  • Volume
    2
  • fYear
    1999
  • fDate
    36495
  • Firstpage
    849
  • Abstract
    The comparison of results on implantation of B+ ions and molecular ions BF2+ into silicon at density of ion beam current (j) up to 120 μA cm-2 has been conducted. The investigation of the kinetics of changes in structure of implanted layers, profiles of distribution of introduced impurities and degree of electrical activation of boron atoms showed that only molecular ions stimulate sufficient dynamic processes during irradiation. This dynamic process causes electrical activation of boron and the shift of its distribution profile towards the surface
  • Keywords
    boron; boron compounds; doping profiles; elemental semiconductors; impurity states; ion implantation; semiconductor doping; silicon; B+; BF2+ ions; Si:B; Si:BF2; distribution profile; dynamic processes; electrical activation; implantation; impurities; intensive beams; ion beam current; kinetics; molecular ions; profiles; silicon; Annealing; Atomic layer deposition; Boron; Crystallization; Electrical resistance measurement; Impurities; Ion beams; Production; Silicon; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology Proceedings, 1998 International Conference on
  • Conference_Location
    Kyoto
  • Print_ISBN
    0-7803-4538-X
  • Type

    conf

  • DOI
    10.1109/IIT.1998.813801
  • Filename
    813801
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=349454