• DocumentCode
    349461
  • Title

    Structural characterization of Ca-ion implanted GaN

  • Author

    Liu, C. ; Wenzel, A. ; Riechert, H. ; Rauschenbach, B.

  • Author_Institution
    Inst. fur Phys., Augsburg Univ., Germany
  • Volume
    2
  • fYear
    1999
  • fDate
    36495
  • Firstpage
    881
  • Abstract
    Results of a systematic study of damage generation and accumulation until amorphization induced by 180 keV Ca+ implantation in GaN films at liquid-nitrogen and room temperature are compared. The as implanted films show an expanded lattice. An initial amorphous component was found after implantation with a dose of 3×1014 and 8×1014 cm-2 at liquid-nitrogen and room temperature, respectively. The mechanism of amorphization is discussed and accumulation of amorphous clusters seems to be the reason for the collapse of the GaN crystalline state
  • Keywords
    III-V semiconductors; amorphisation; gallium compounds; ion implantation; semiconductor thin films; wide band gap semiconductors; 180 keV; 293 K; 77 K; Ca+ implantation; GaN:Ca; amorphization; amorphous clusters; damage accumulation; damage generation; expanded lattice; Amorphous materials; Backscatter; Crystalline materials; Doping; Epitaxial growth; Gallium nitride; Impurities; Ion implantation; Optical films; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology Proceedings, 1998 International Conference on
  • Conference_Location
    Kyoto
  • Print_ISBN
    0-7803-4538-X
  • Type

    conf

  • DOI
    10.1109/IIT.1998.813809
  • Filename
    813809
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=349461