• DocumentCode
    3494627
  • Title

    Investigation of the high temperature stability of TiN-Al2O3-TiN capacitors for sub 50nm deep trench DRAM

  • Author

    Böscke, T. ; Kudelka, S. ; Sänger, A. ; Müller, J. ; Krautschneider, W.

  • fYear
    2006
  • fDate
    Sept. 2006
  • Firstpage
    391
  • Lastpage
    394
  • Abstract
    This paper deals with the investigation of mechanisms leading to a degradation of the electrical properties of titanium nitride - aluminum oxide - titanium nitride capacitors at high temperatures. Several degradation mechanisms could be identified by thorough electrical and physical characterization. The findings will serve as a future guide to build thermally stable MIM capacitors
  • Keywords
    DRAM chips; MIM devices; aluminium compounds; capacitors; thermal stability; titanium compounds; 50 nm; DRAM; TiN-Al2O3-TiN; high temperature stability; thermally stable MIM capacitors; Aluminum oxide; Annealing; Dielectrics; Electrodes; Leakage current; MIM capacitors; Random access memory; Stability; Temperature; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2006. ESSDERC 2006. Proceeding of the 36th European
  • Conference_Location
    Montreux
  • ISSN
    1930-8876
  • Print_ISBN
    1-4244-0301-4
  • Type

    conf

  • DOI
    10.1109/ESSDER.2006.307720
  • Filename
    4099938
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3494627