MeV implantation introduced damage at the LOCOS bird´s beak in 0.35 μm flash memory devices

Author

Wu, Hong J. ; Bhattacharya, Surya ; Krishnamurthy, Shyam ; Sharma, Umesh

Author_Institution

Adv. Process Technol., Rockwell Semicond. Syst., Newport Beach, CA, USA

Volume

2

fYear

1999

fDate

36495

Firstpage

937

Abstract

This paper reports on the impact of high energy (MeV) retrograde well implants on the reliability of Flash Memory devices. These implants are shown to severely damage the oxide at the LOCOS bird´s beak edge. The degree of SiO₂ amorphization caused by the high-energy ion implantation is shown to be enhanced by the LOCOS structure. The amorphization causes accelerated oxide loss during subsequent oxide etch-backs. Both performance and reliability of Flash Memory cells is degraded due to this damage. We demonstrate a technique for reducing the implant induced damage and thereby improve device performance and reliability

Keywords

flash memories; ion beam effects; ion implantation; semiconductor device reliability; semiconductor doping; 0.35 μm flash memory devices; 0.35 mum; LOCOS bird´s beak; MeV implantation introduced damage; SiO₂ amorphization; device performance; high energy retrograde well implants; implant induced damage; oxide etch-backs; reliability; CMOS technology; Crystalline materials; Etching; Flash memory; Hafnium; Implants; Semiconductor device reliability; Semiconductor materials; Silicon; Tensile stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology Proceedings, 1998 International Conference on

Conference_Location

Kyoto

Print_ISBN

0-7803-4538-X

Type

conf

DOI

10.1109/IIT.1998.813831

Filename

813831