DocumentCode
349480
Title
Precise, fast and accurate depth profiling of sub-keV to MeV B implants in Si
Author
Pate, S.B. ; Sears, A. ; Maul, J.L.
Author_Institution
Atomika Instrum. GmbH, Munich, Germany
Volume
2
fYear
1999
fDate
36495
Firstpage
955
Abstract
Low and high energy boron implanted silicon samples have been analyzed using the Atomika 4500 SIMS tool. High precision of dose measurement for keV and sub-keV boron implants is shown. Methods of obtaining fast and accurate boron profiles are discussed
Keywords
boron; doping profiles; elemental semiconductors; ion implantation; secondary ion mass spectra; semiconductor doping; silicon; Atomika 4500 SIMS tool; Si:B; depth profiling; sub-keV to MeV B implants; Atomic measurements; Boron; Energy measurement; Implants; Instruments; Ionization; Loss measurement; Silicon; Testing; Velocity measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location
Kyoto
Print_ISBN
0-7803-4538-X
Type
conf
DOI
10.1109/IIT.1998.813836
Filename
813836
Link To Document