Wideband AlGaN/GaN HEMT low noise amplifier for highly survivable receiver electronics

Author

Cha, S. ; Chung, Y.H. ; Wojtowwicz, M. ; Smorchkova, I. ; Allen, B.R. ; Yang, J.M. ; Kagiwada, R.

Author_Institution

Northrop Grumman Space Technol., Redondo Beach, CA, USA

Volume

2

fYear

2004

fDate

6-11 June 2004

Firstpage

829

Abstract

Gallium Nitride has emerged as the technology of choice for the next generation high power electronics. However, its ability to handling high power also makes it the perfect technology candidate for highly survivable receiver components. This has obvious cost benefit for the footprint of the LNA will be smaller since no extra front-end protection circuitry is required. In this paper, a wideband Gallium Nitride HEMT low noise amplifier MMIC, using novel dual gate topology, has been design and manufactured to demonstrate Gallium Nitride low noise capability.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; MOCVD; aluminium compounds; gallium compounds; integrated circuit design; integrated circuit noise; millimetre wave receivers; semiconductor growth; wide band gap semiconductors; AlGaN-GaN; LNA; MMIC; dual gate topology; gallium nitride; high electron mobility transistors; low noise amplifier; monolithic microwave integrated circuit; next generation high power electronics; receiver electronics; wideband AlGaN/GaN HEMT; Aluminum gallium nitride; Broadband amplifiers; Circuit noise; Gallium nitride; HEMTs; III-V semiconductor materials; Low-noise amplifiers; MMICs; Power electronics; Protection;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2004 IEEE MTT-S International

ISSN

0149-645X

Print_ISBN

0-7803-8331-1

Type

conf

DOI

10.1109/MWSYM.2004.1339093

Filename

1339093