Formation of nickel silicide on nitrogen ion implanted silicon

Author

Cheng, L.W. ; Chen, J.Y. ; Chen, J.C. ; Cheng, S.L. ; Chen, L.J. ; Tsui, B.Y.

Author_Institution

Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan

Volume

2

fYear

1999

fDate

36495

Firstpage

1002

Abstract

The self-aligned-silicidation technique has become a crucial part of ultra-high speed CMOS technologies. Many studies on NiSi have been reported recently. NiSi possesses many advantages and appears to be a suitable candidate to replace TiSi₂ in future ULSI devices. Nitrogen ion implantation has been used to suppress the boron and arsenic diffusion as well as hot-carrier degradation. In this paper, the formation of nickel silicides on nitrogen ion implanted silicon is investigated. The phase formation of nickel silicides on nitrogen implanted (001)Si was suppressed and shifted to a higher temperature compared to that of blank sample. The presence of nitrogen ion was found to improve the crystallinity of epitaxial NiSi₂. The effects of nitrogen on nickel silicide formation become more pronounced with the increase In the dose of nitrogen implantation

Keywords

elemental semiconductors; ion implantation; metallic thin films; metallisation; nickel compounds; nitrogen; silicon; N ion implantation; NiSi; NiSi-Si:N; NiSi₂; Si:N; ULSI devices; crystallinity; epitaxial NiSi₂; phase formation; self-aligned-silicidation technique; ultra-high speed CMOS technologies; Boron; CMOS technology; Degradation; Hot carriers; Ion implantation; Nickel; Nitrogen; Silicides; Silicon; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology Proceedings, 1998 International Conference on

Conference_Location

Kyoto

Print_ISBN

0-7803-4538-X

Type

conf

DOI

10.1109/IIT.1998.813848

Filename

813848