Model for electron redistribution in silicon nitride

Author

Furnémont, A. ; Rosmeulen, M. ; Van Houdt, J. ; De Meyer, K. ; Maes, H.

Author_Institution

Interuniversity Microelectron. Center, Heverlee

fYear

2006

fDate

19-21 Sept. 2006

Firstpage

447

Lastpage

450

Abstract

The growing importance of nitride-based localised charge-trapping storage has increased the interest in the characterisation of the silicon nitride properties. A new model of the electron motion in the nitride layer is developed, based on Frenkel-Poole detrapping and complete redistribution along the channel. The energy of the traps is evaluated to be around 1.8 eV, with a standard deviation of 0.27 eV. The charge-pumping based extraction of the complete distribution of electrons in the nitride along the channel allows a direct verification of the model. Both high temperature (les 250degC) and high field (|V _G| = 11 V) measurements are in good agreement with the model

Keywords

Poole-Frenkel effect; electrodes; silicon compounds; 0.27 eV; 11 V; Frenkel-Poole detrapping; charge-pumping based extraction; electron motion; electron redistribution; nitride layer; nitride-based localised charge-trapping storage; silicon nitride properties; Charge pumps; Current measurement; Dielectric measurements; Electron traps; Microelectronics; Nonvolatile memory; Semiconductor device modeling; Silicon; Temperature distribution; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2006. ESSDERC 2006. Proceeding of the 36th European

Conference_Location

Montreux

ISSN

1930-8876

Print_ISBN

1-4244-0301-4

Type

conf

DOI

10.1109/ESSDER.2006.307734

Filename

4099952