High-Q integrated 3-D inductors and transformers for high frequency applications

Author

Weon, Dae-Hee ; Jeon, Jong-Hyeok ; Kim, Jeong-II ; Mohammadi, Saeed ; Katehi, Linda P B

Author_Institution

Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA

Volume

2

fYear

2004

fDate

6-11 June 2004

Firstpage

877

Abstract

Using a novel 3-D fabrication technology, we have demonstrated, for the first time, very high frequency and high quality factor (Q) inductors and transformers on Si substrate. On high resistivity Si, this technology achieves a quality factor of Q>60 for 1nH inductor at frequencies of 3 to 7 GHz. High efficiency high-Q transformers with coupling factors 0.6res<16 GHz). This technology is very simple and is fully compatible with Si and compound-semiconductor fabrication technologies and can be either implemented as a post-processing step or as a part of a vertical chip to inter poser packaging scheme.

Keywords

Q-factor; S-parameters; chip scale packaging; high-frequency transformers; inductors; integrated circuit design; microwave integrated circuits; 3 to 7 GHz; 3-D fabrication; Si; Si substrate; coupling factors; high resistivity; high self-resonance frequency; high-quality factor integrated 3-D inductors; high-quality factor integrated 3-D transformers; poser packaging scheme; semiconductor fabrication; vertical chip; Chromium; Circuits; Dielectric substrates; Fabrication; Gold; Inductors; Q factor; Radio frequency; Tensile stress; Transformers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2004 IEEE MTT-S International

ISSN

0149-645X

Print_ISBN

0-7803-8331-1

Type

conf

DOI

10.1109/MWSYM.2004.1339109

Filename

1339109