Title :
Thermal annealing behavior of iron implanted into alumina
Author :
Kobayashi, Tomohiro ; Terai, Takayuki
Author_Institution :
Sch. of Eng., Tokyo Univ., Japan
Abstract :
Single crystal alumina was implanted with 2.6×1017 Fe+/cm2 at 380 keV. The specimens were annealed at 1073 K and the change of the iron distribution profile and the charge state were investigated. Furthermore, the electrical property and surface morphology were discussed in connection with the behavior of iron
Keywords :
alumina; annealing; impurity distribution; ion implantation; iron; surface structure; 1073 K; 380 keV; Al2O3:Fe; Al2O3:Fe+; alumina; charge state; distribution profile; electrical property; single crystal; surface morphology; thermal annealing; Annealing; Atomic force microscopy; Ceramics; Ion accelerators; Ion beams; Ion implantation; Ion sources; Iron; Semiconductor materials; Surface morphology;
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
DOI :
10.1109/IIT.1998.813872
