DocumentCode
349516
Title
Small angle glancing X-ray scattering for surface characterization of ion-implanted industrial materials
Author
Fujii, Y. ; Kashihara, Y. ; Yokoyama, K. ; Nakagawa, S. ; Nagaya, J. ; Nakayama, T. ; Yoshida, K.
Author_Institution
Fac. of Eng., Kobe Univ., Japan
Volume
2
fYear
1999
fDate
36495
Firstpage
1121
Abstract
Intense X-ray beams in synchrotron radiation (SR) facilities have potential applicabilities for characterization of industrial materials surfaces such as ion-implanted, ion-plated and so on. The authors also constructed a compact ultrahigh vacuum X-ray diffractometer using a rotating anode source as a preliminary apparatus to the measurements to be carried out in the SR facility, Spring-8, which is being constructed in Hyogo prefecture. The apparatus makes use of total reflection of X-rays and is so designed that the atoms only at the surface, ca. 10 atomic layers deep, give rise to the scattering, In this paper, results of the observations of some industrial materials surfaces by this small apparatus, even though they are not sufficiently complete yet, will be presented. They include (1) mechanically polished pure iron polycrystal surfaces (ferrite, 3 nines purity) before and after the baking at 500°C for 20 hr in a vacuum of 10-8 Torr, which shows a sudden broadening of the scattered profiles, and (2) High Speed Steel (SKH steel) surfaces which are ion-plated by TiN at different stages in their manufacturing processes
Keywords
X-ray scattering; ion implantation; surface topography; surface treatment; synchrotron radiation; compact ultrahigh vacuum X-ray diffractometer; ion-implanted industrial materials; mechanically polished pure iron polycrystal surfaces; rotating anode source; scattered profiles; small angle glancing X-ray scattering; surface characterization; Anodes; Atomic layer deposition; Atomic measurements; Optical reflection; Rotation measurement; Steel; Strontium; Synchrotron radiation; X-ray diffraction; X-ray scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location
Kyoto
Print_ISBN
0-7803-4538-X
Type
conf
DOI
10.1109/IIT.1998.813879
Filename
813879
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