DocumentCode :
349516
Title :
Small angle glancing X-ray scattering for surface characterization of ion-implanted industrial materials
Author :
Fujii, Y. ; Kashihara, Y. ; Yokoyama, K. ; Nakagawa, S. ; Nagaya, J. ; Nakayama, T. ; Yoshida, K.
Author_Institution :
Fac. of Eng., Kobe Univ., Japan
Volume :
2
fYear :
1999
fDate :
36495
Firstpage :
1121
Abstract :
Intense X-ray beams in synchrotron radiation (SR) facilities have potential applicabilities for characterization of industrial materials surfaces such as ion-implanted, ion-plated and so on. The authors also constructed a compact ultrahigh vacuum X-ray diffractometer using a rotating anode source as a preliminary apparatus to the measurements to be carried out in the SR facility, Spring-8, which is being constructed in Hyogo prefecture. The apparatus makes use of total reflection of X-rays and is so designed that the atoms only at the surface, ca. 10 atomic layers deep, give rise to the scattering, In this paper, results of the observations of some industrial materials surfaces by this small apparatus, even though they are not sufficiently complete yet, will be presented. They include (1) mechanically polished pure iron polycrystal surfaces (ferrite, 3 nines purity) before and after the baking at 500°C for 20 hr in a vacuum of 10-8 Torr, which shows a sudden broadening of the scattered profiles, and (2) High Speed Steel (SKH steel) surfaces which are ion-plated by TiN at different stages in their manufacturing processes
Keywords :
X-ray scattering; ion implantation; surface topography; surface treatment; synchrotron radiation; compact ultrahigh vacuum X-ray diffractometer; ion-implanted industrial materials; mechanically polished pure iron polycrystal surfaces; rotating anode source; scattered profiles; small angle glancing X-ray scattering; surface characterization; Anodes; Atomic layer deposition; Atomic measurements; Optical reflection; Rotation measurement; Steel; Strontium; Synchrotron radiation; X-ray diffraction; X-ray scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
Type :
conf
DOI :
10.1109/IIT.1998.813879
Filename :
813879
Link To Document :
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