DocumentCode :
3495167
Title :
Improved performance and thermal stability of interdigitated power RF bipolar transistors with nonlinear base ballasting
Author :
Jang, Jaejune ; Kan, Edwin C. ; Dutton, Robert W. ; Arnborg, T.
Author_Institution :
Stanford Univ., CA, USA
fYear :
1997
fDate :
28-30 Sep 1997
Firstpage :
143
Lastpage :
146
Abstract :
A novel base ballasting scheme for interdigitated power RF bipolar transistors has demonstrated improved performance and thermal stability. The nonlinear ballast resistor in series with each base finger is implemented by depletion-mode FET, which requires only minor modification in the fabrication process. Mixed mode simulation, instead of analytical equations, is used for more universal device analyses
Keywords :
power bipolar transistors; depletion-mode FET; interdigitated power RF bipolar transistors; mixed-mode simulation; nonlinear ballast resistor; nonlinear base ballasting; thermal stability; Analytical models; Bipolar transistors; Electronic ballasts; FETs; Fabrication; Fingers; Nonlinear equations; Radio frequency; Resistors; Thermal stability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1997. Proceedings of the
Conference_Location :
Minneapolis, MN
ISSN :
1088-9299
Print_ISBN :
0-7803-3916-9
Type :
conf
DOI :
10.1109/BIPOL.1997.647421
Filename :
647421
Link To Document :
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