Title :
Photovoltaic properties of ion beam synthesized β-FeSi2 /Si(100)
Author :
Maeda, Yoshihito ; Umezawa, Katsuyuki ; Miyake, Kiyoshi ; Sagawa, Masakazu
Author_Institution :
Dept. of Mater. Sci., Osaka Prefecture Univ., Japan
Abstract :
The ion beam synthesized β-FeSi2/n-Si heterojunction is examined as a candidate of IR sensitive materials. The large grain (~10 μm) polycrystalline β-FeSi2/n-Si heterojunction can be formed by triple energy implantation and subsequent annealing at 800°C. The β-FeSi2 grains show good crystallinity with an optical direct band-gap of 0.84 eV and a large hole mobility of 440 cm2/Vs at 293 K. The heterojunction shows a diode characteristic with high concentration of acceptors. The photovoltaic properties for visible and IR light are very sensitive to surface recombination processes
Keywords :
annealing; elemental semiconductors; grain size; hole mobility; iron compounds; photovoltaic effects; semiconductor heterojunctions; semiconductor materials; semiconductor thin films; silicon; surface photovoltage; surface recombination; β-FeSi2/Si(100); 0.84 eV; 10 mum; 293 K; 800 C; FeSi2-Si; annealing; heterojunction; ion beam synthesized; large grain size; large hole mobility; optical direct band-gap; photovoltaic properties; surface recombination processes; triple energy implantation; Annealing; Crystalline materials; Crystallization; Heterojunctions; Ion beams; Optical materials; Optical sensors; Photonic band gap; Photovoltaic systems; Solar power generation;
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
DOI :
10.1109/IIT.1998.813881
