Microanalysis of FIB induced deposited Pt films using ion microprobe

Author

Park, Y.K. ; Nagai, T. ; Takai, M. ; Lehrer, C. ; Frey, L. ; Ryssel, H.

Author_Institution

Res. Center for Extreme Mater., Osaka Univ., Japan

Volume

2

fYear

1999

fDate

36495

Firstpage

1137

Abstract

The localized beam induced deposition by 30 keV Ga⁺ FIB has been investigated using RBS mapping images by a 300 keV Be²⁺ microprobe with a beam spot size of 80 nm. The amount of Pt atoms increased due to the decomposition of precursor gas for FIB induced deposition with the increase in ion dose. Residual Ga atoms were found to distribute at and nearby the deposited area within 1.5 μm due to the implantation and redeposition from the Ga FIB, while low-Z elements such as C and O distributed at and around the processed areas within 10 μm due to the adsorbed molecules of precursor gas

Keywords

Rutherford backscattering; focused ion beam technology; ion implantation; ion microprobe analysis; metallic thin films; platinum; 30 keV; 300 keV; 80 nm; FIB induced deposited Pt films; Pt; RBS mapping images; ion microprobe; localized beam induced deposition; microanalysis; Atomic layer deposition; Conductivity; Electromagnetic wave absorption; Focusing; Gold; Impurities; Ion beams; Materials science and technology; Prototypes; X-ray lithography;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology Proceedings, 1998 International Conference on

Conference_Location

Kyoto

Print_ISBN

0-7803-4538-X

Type

conf

DOI

10.1109/IIT.1998.813883

Filename

813883