DocumentCode :
3495203
Title :
Laterally-driven piezoelectric bimorph MEMS actuator with sol-gel-based high-aspect-ratio PZT sturucture
Author :
Wang, Nan ; Yoshida, Sigeru ; Kumano, Masahito ; Kawai, Yusuke ; Tanaka, Shoji ; Esashi, Masayoshi
Author_Institution :
Grad. Sch. of Eng., Tohoku Univ., Sendai, Japan
fYear :
2013
fDate :
20-24 Jan. 2013
Firstpage :
197
Lastpage :
200
Abstract :
This paper reports on the fabrication and characterization of a novel laterally-driven piezoelectric bimorph MEMS actuator with high aspect-ratio (AR) lead-zirconate-titanate (PZT) structure. In the fabrication process, the PZT structures (AR=8) was successfully fabricated by filling deep Si trenches with nanocomposite sol-gel PZT. A lateral displacement of 10 μm was obtained from a 500-μm-long actuator by bimorph actuation at driving voltages of +25 V/-5 V, while no vertical cross-motion as well as no initial vertical bending was observed. Compared with conventional capacitive comb-drive actuators, this actuator occupies a much smaller area to generate identical force or displacement. This actuator has the potential to become a new actuation technology in MEMS.
Keywords :
elemental semiconductors; lead compounds; microactuators; microfabrication; nanocomposites; piezoelectric actuators; silicon; sol-gel processing; AR; PZT-Si; capacitive comb-drive actuator; distance 10 mum; filling deep Si trench; laterally-driven piezoelectric bimorph MEMS actuator; microfabrication; nanocomposite; size 500 mum; sol-gel-based high-aspect-ratio PZT structure; vertical bending; vertical cross-motion; voltage -5 V; voltage 25 V; Actuators; Electrodes; Fabrication; Films; Micromechanical devices; Resonant frequency; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2013 IEEE 26th International Conference on
Conference_Location :
Taipei
ISSN :
1084-6999
Print_ISBN :
978-1-4673-5654-1
Type :
conf
DOI :
10.1109/MEMSYS.2013.6474211
Filename :
6474211
Link To Document :
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