Direct-write n- and p-type graphene channel FETs

This paper presents a maskless, direct-write process to create both n- and p-type graphene channel FETs (Field Effect Transistors) on a single substrate. There are following achievements as compared with previous works: (1) direct deposition of controllable, arbitrary fiber patterns to construct graphene-based transistor, in which near-field electrospinning process is integrated to pattern the polymer fibers; (2) a maskless doping process to make both n-and/or p-type graphene on the same substrate, in which electrospun fibers serve as both the oxygen plasma etching mask and chemical doping sources, simultaneously; and As such, the demonstrated process could open up a new class of graphene-based devices for various applications.