Title :
Effect of nitrogen doping on the structure and properties of tetrahedral amorphous carbon films
Author :
Chen, Z.Y. ; Yu, Y.H. ; Zhao, J.P. ; Shi, T.S. ; Liu, X.H. ; Zou, S.C.
Author_Institution :
Inst. of Metall., Acad. Sinica, Shanghai, China
Abstract :
The influence of nitrogen doping on the structure and properties of tetrahedral amorphous carbon (ta-C) films was investigated. Ta-C films were synthesized by a new plasma deposition technique, filtered arc deposition (FAD). Nitrogen was introduced into ta-C film by admitting high-purity nitrogen gas to the deposition chamber during film growth. Rutherford backscattering (RBS), atomic force microscopy (AFM), infrared (IR) reflection spectroscopy, spectroscopic ellipsometry (SE) and Hall measurement were used to characterize the structure and properties of nitrogen doped ta-C films, Research indicates that the variation of physical, optical and electrical properties results from the change of structure in films due to nitrogen doping
Keywords :
Hall effect; Rutherford backscattering; amorphous semiconductors; atomic force microscopy; carbon; ellipsometry; infrared spectra; nitrogen; plasma deposition; semiconductor doping; semiconductor thin films; C; Hall effect; IR reflection spectra; Rutherford backscattering; atomic force microscopy; filtered arc deposition; nitrogen doping; plasma deposition; spectroscopic ellipsometry; tetrahedral amorphous carbon films; Atom optics; Atomic force microscopy; Atomic measurements; Doping; Force measurement; Infrared spectra; Nitrogen; Optical films; Optical microscopy; Plasma measurements;
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
DOI :
10.1109/IIT.1998.813888
