• DocumentCode
    349526
  • Title

    Ultra-shallow 28-88 nm n+/p junction formation using PH 3 and AsH3 plasma immersion ion implantation

  • Author

    Yang, B.L. ; Cheung, Nathan W. ; Denholm, Stuart ; Shao, Jiqun

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
  • Volume
    2
  • fYear
    1999
  • fDate
    36495
  • Firstpage
    1163
  • Abstract
    Ultra-shallow 28-88 nm n+/p junctions formed by PH3 and AsH3 plasma immersion ion implantation (PIII) have been studied. Diodes with 4.2 nA/cm2 total junction reverse leakage current density and 2.4 nA/cm2 intrinsic junction bulk leakage current density have been obtained. It is found that the junction depths, sheet resistance and junction reverse leakage current depend on implantation carrier gases, implantation energy and annealing conditions
  • Keywords
    annealing; arsenic; current density; elemental semiconductors; ion implantation; leakage currents; p-n junctions; phosphorus; plasma materials processing; semiconductor doping; silicon; 28 to 88 nm; AsH3; PH3; Si:As; Si:P; annealing; bulk leakage current density; implantation carrier gases; implantation energy; junction depth; plasma immersion ion implantation; reverse leakage current density; sheet resistance; ultrashallow n+/p junction formation; Annealing; Ash; Electrical resistance measurement; Helium; Ion implantation; Leakage current; Nuclear and plasma sciences; Plasma immersion ion implantation; Semiconductor diodes; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology Proceedings, 1998 International Conference on
  • Conference_Location
    Kyoto
  • Print_ISBN
    0-7803-4538-X
  • Type

    conf

  • DOI
    10.1109/IIT.1998.813890
  • Filename
    813890
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=349526