Title :
Ultra-shallow 28-88 nm n+/p junction formation using PH 3 and AsH3 plasma immersion ion implantation
Author :
Yang, B.L. ; Cheung, Nathan W. ; Denholm, Stuart ; Shao, Jiqun
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
Ultra-shallow 28-88 nm n+/p junctions formed by PH3 and AsH3 plasma immersion ion implantation (PIII) have been studied. Diodes with 4.2 nA/cm2 total junction reverse leakage current density and 2.4 nA/cm2 intrinsic junction bulk leakage current density have been obtained. It is found that the junction depths, sheet resistance and junction reverse leakage current depend on implantation carrier gases, implantation energy and annealing conditions
Keywords :
annealing; arsenic; current density; elemental semiconductors; ion implantation; leakage currents; p-n junctions; phosphorus; plasma materials processing; semiconductor doping; silicon; 28 to 88 nm; AsH3; PH3; Si:As; Si:P; annealing; bulk leakage current density; implantation carrier gases; implantation energy; junction depth; plasma immersion ion implantation; reverse leakage current density; sheet resistance; ultrashallow n+/p junction formation; Annealing; Ash; Electrical resistance measurement; Helium; Ion implantation; Leakage current; Nuclear and plasma sciences; Plasma immersion ion implantation; Semiconductor diodes; Silicon;
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
DOI :
10.1109/IIT.1998.813890
