The effect of collisions on pulsed and DC plasma immersion ion implantation

Author

Linder, B.P. ; Cheung, N.W.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA

Volume

2

fYear

1999

fDate

36495

Firstpage

1183

Abstract

Plasma Immersion Ion Implantation (PIII) is an emerging implant technology for high dose and low energy applications. Because implantation and plasma generation occur at the same pressure, PIII implants generally operate in the mtorr range. At this pressure, ion-neutral collisions in the sheath significantly affect the implant. Previous work has concentrated on the implant ion distribution. Through Monte Carlo simulation, three new issues will be addressed: neutral energies for PIII implants, the effect of collisions on dose rate, and the effect of collisions on measured target current

Keywords

Monte Carlo methods; ion implantation; plasma collision processes; plasma materials processing; plasma theory; semiconductor doping; DC plasma; Monte Carlo simulation; dose rate; ion-neutral collisions; neutral energies; plasma immersion ion implantation; pulsed plasma; target current; Acceleration; Argon; Distribution functions; Electrons; Implants; Plasma immersion ion implantation; Scattering; Steady-state; Tail; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology Proceedings, 1998 International Conference on

Conference_Location

Kyoto

Print_ISBN

0-7803-4538-X

Type

conf

DOI

10.1109/IIT.1998.813895

Filename

813895