Title :
Simulation of plasma-immersed implantation of trenches
Author :
Paulus, M. ; Rauschenbach, B. ; Stals, L. ; Rüde, U.
Author_Institution :
Inst. fur Phys., Augsburg Univ., Germany
Abstract :
The results of a particle-in-cell simulation for the plasma system in the plasma immersion ion implantation context is presented. PIII of two-dimensional trenches is studied using this simulation. Modeling of the potential around the trenches and the development of the plasma sheath in dependence on the pulse time is demonstrated. The implanted concentration, the average impact ion angle and the ion energy are computed as function of the pulse time and discussed in dependence on the aspect ratios of trenches
Keywords :
ion implantation; plasma materials processing; plasma sheaths; plasma simulation; semiconductor doping; impact ion angle; implanted concentration; ion energy; particle-in-cell simulation; plasma immersion ion implantation; plasma sheath; pulse time dependence; trench aspect ratios; two-dimensional trenches; Context modeling; Electrons; Ion implantation; Numerical models; Plasma density; Plasma immersion ion implantation; Plasma sheaths; Plasma simulation; Plasma temperature; Poisson equations;
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
DOI :
10.1109/IIT.1998.813896
